moduation-doping, GaAs quantum, electron spins, Kerr rotation
We have measured T1 spin lifetimes of a 14 nm modulation-doped (100) GaAs quantum well using a time-resolved pump-probe Kerr rotation technique. The quantum well was selected by tuning the wavelength of the probe laser. T1 lifetimes in excess of 1 Us were measured at 1.5 K and 5.5 T, exceeding the typical T2 lifetimes that have been measured in GaAs and II-VI quantum wells by orders of magnitude. We observed effects from nuclear polarization, which were largely removable by simultaneous nuclear magnetic resonance, along with two distinct lifetimes under some conditions that likely result from probing two differently localized subsets of electrons.
Original Publication Citation
BYU ScholarsArchive Citation
Colton, John S.; Meyer, D.; Clark, K; Craft, D.; Cutler, J.; Park, T.; and White, P., "Long-lived electron spins in a modulation doped (100) GaAs quantum well" (2012). Faculty Publications. 71.
American Institute of Physics
Physical and Mathematical Sciences
Physics and Astronomy
© 2012 American Institute of Physics
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