Keywords
moduation-doping, GaAs quantum, electron spins, Kerr rotation
Abstract
We have measured T1 spin lifetimes of a 14 nm modulation-doped (100) GaAs quantum well using a time-resolved pump-probe Kerr rotation technique. The quantum well was selected by tuning the wavelength of the probe laser. T1 lifetimes in excess of 1 Us were measured at 1.5 K and 5.5 T, exceeding the typical T2 lifetimes that have been measured in GaAs and II-VI quantum wells by orders of magnitude. We observed effects from nuclear polarization, which were largely removable by simultaneous nuclear magnetic resonance, along with two distinct lifetimes under some conditions that likely result from probing two differently localized subsets of electrons.
Original Publication Citation
null
BYU ScholarsArchive Citation
Colton, John S.; Meyer, D.; Clark, K; Craft, D.; Cutler, J.; Park, T.; and White, P., "Long-lived electron spins in a modulation doped (100) GaAs quantum well" (2012). Faculty Publications. 71.
https://scholarsarchive.byu.edu/facpub/71
Document Type
Peer-Reviewed Article
Publication Date
2012-10-18
Permanent URL
http://hdl.lib.byu.edu/1877/2989
Publisher
American Institute of Physics
Language
English
College
Physical and Mathematical Sciences
Department
Physics and Astronomy
Copyright Status
© 2012 American Institute of Physics
Copyright Use Information
http://lib.byu.edu/about/copyright/