Keywords
band gap, bowing, epitaxial alloys, offsets
Abstract
We use pseudopotential theory to provide (1) the band offsets of strained GaAs and InAs on various substrates and (2) the energies Ev(x) of the valence and conduction bands of InxGa1-xAs alloy, as a function of composition. Results are presented for both the bulk alloy and for the alloy strained on InP or GaAs. We predict that while Ex(x) bows downward for relaxed bulk alloys, it bows upward for strained epitaxial alloys. The calculated alloy offsets are used to discuss electron and hole localization in this system.
Original Publication Citation
K. Kim, G. L. W. Hart, and A. Zunger, "Negative Band Gap Bowing in Epitaxial InAs/GaAs Alloys and Predicted Band Offsets of the Strained Binaries and Alloys on Various Substrates," Appl. Phys. Lett. 8 315 (29 April 22). The original article may be found here: http://apl.aip.org/resource/1/applab/v8/i17/p315_s1
BYU ScholarsArchive Citation
Hart, Gus L. W.; Kim, Kwiseon; and Zunger, Alex, "Negative band gap bowing in epitaxial InAs/GaAs alloys and predicted band offsets of the strained binaries and alloys on various substrates" (2002). Faculty Publications. 546.
https://scholarsarchive.byu.edu/facpub/546
Document Type
Peer-Reviewed Article
Publication Date
2002-02-26
Permanent URL
http://hdl.lib.byu.edu/1877/2962
Publisher
American Institute of Physics
Language
English
College
Physical and Mathematical Sciences
Department
Physics and Astronomy
Copyright Status
© 2002 American Institute of Physics
Copyright Use Information
http://lib.byu.edu/about/copyright/