Keywords

spin-flip, n-GaAs, polarization, photoluminescence

Abstract

We have observed microsecond spin-flip times in lightly doped n-GaAs, by measuring the photoluminescence polarization in the time domain with pump and probe pulses. Times up to 1.4 μs have been measured. Our results as a function of magnetic field indicated three regions governing the spin relaxation: a low field region, where spin-flip times increase due to suppression of the nuclear hyperfine interaction for localized electrons, a medium field region where spin-flip times increase due to narrowing of the hyperfine relaxation for interacting electrons, and a high field region where spin-flip times begin to level off due to the increasing importance of spin-orbit relaxation mechanisms.

Original Publication Citation

Microsecond spin-flip times in n-GaAs measured by time resolved polarization of photoluminescence, J.S. Colton, T.A. Kennedy, A.S. Bracker, and D. Gammon, Phys Rev B 69, 12137(R) (24). The original version may be found at: http://prb.aps.org/abstract/PRB/v69/i12/e12137