Keywords
silicon points, emission, photocathode, x-ray diode, etching
Abstract
We have produced arrays of 10,000 sharp p-type silicon points using an etch plus oxidation method. The points were used as electron emitters. No high vacuum cesiation or high temperature cleaning was needed to observe the electron emission. These are seen to be photosensitive sources of electrons at 200 K and 300 K. They were also used to produce AlKα x-rays. This constitutes the first use of etched, point arrays for generating electrons for x-ray sources.
Original Publication Citation
W.I. Karain, Larry V. Knight, David D. Allred and A. Reyes-Mena, "X-ray diode using a silicon field emission photocathode," Soft X Ray Microscopy, Chris J. Jacobsen and James E. Trebes, Editors, Proceedings of SPIE 1741 (1992), 12-18. http://spiedigitallibrary.org/proceedings/resource/2/psisdg/1741/1/12_1?isAuthorized=no http://dx.doi.org/1.1117/12.138731
BYU ScholarsArchive Citation
Karian, W. I.; Knight, Larry V.; Allred, David D.; and Reyes-Mena, A., "X-ray Diode Using a Silicon Field Emission Photocathode" (1992). Faculty Publications. 1351.
https://scholarsarchive.byu.edu/facpub/1351
Document Type
Peer-Reviewed Article
Publication Date
1992
Permanent URL
http://hdl.lib.byu.edu/1877/2913
Publisher
Society of Photo Optical Instrumentation Engineers (SPIE)
Language
English
College
Physical and Mathematical Sciences
Department
Physics and Astronomy
Copyright Status
© 1992 Society of Photo-Optical Instrumentation Engineers (SPIE). One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.
Copyright Use Information
http://lib.byu.edu/about/copyright/