Abstract

The aluminum oxide growth rate for aluminum protected with 2.4 nm of aluminum fluoride has been determined. We show that a 2.4 nm aluminum fluoride layer does not prevent aluminum from oxidation but does significantly retard the oxide growth – decreasing the oxide layer thickness from 1 nm in less than an hour to 0.9 nm over 116 hours. Additionally, the optical constants for aluminum oxide growing under an aluminum fluoride barrier layer have been determined – showing an increase in absorption at high energies for Al2O3 forming at room temperature as compared to highly ordered Al2O3 formed at high temperatures.

Degree

MS

College and Department

Physical and Mathematical Sciences; Physics and Astronomy

Rights

http://lib.byu.edu/about/copyright/

Date Submitted

2017-12-01

Document Type

Thesis

Handle

http://hdl.lib.byu.edu/1877/etd9661

Keywords

UV astronomy, aluminum fluoride, aluminum oxide growth rate, LUVOIR, thin film

Language

english

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