Opportunities to Investigate novel Stable p-type ZnO: Making progress with the Asymmetric dopant problem

Authors

Davild Allred, Brigham Young UniversityFollow

Files

Description

For over 60 years p-type Wide-bandgap semiconductors have been a problem. ZnO has been described as a very desirable semiconductor materials.

How to make stable forms of moderate to heavily p-type semiconductors, For example, for zinc-oxide this elusive goal has been driven by the material’s desirable electronic, thermal, and mechanical properties.

The traditional approach seems unlikely to succeed due to compound stability and vapor pressure constraints on diffusional processes. Diffusion couples cannot be used to create long-term stable p-type zinc oxides.

Publication Date

8-2016

Publisher

Research Development Office

City

Provo

Keywords

Thin films, Extreme Ultraviolet Optics, Nanostructures-MEMS, Mars Simulations, Alternate Energy Issues (Solar, Batteries, etc.)

Disciplines

Physical Sciences and Mathematics

Recommended Citation

Allred, Davild, "Opportunities to Investigate novel Stable p-type ZnO: Making progress with the Asymmetric dopant problem" (2016). BYU Research Development Office Research Networking Conference. 38.
https://scholarsarchive.byu.edu/researchnetworking/38