Photoluminescence (PL) line shapes in InGaN multiple quantum well structures have been studied experimentally and theoretically between 10 and 300 K. The higher temperature PL spectra can be fitted qualitatively with a thermalized carrier distribution and a broadened joint-density-of-states. The low temperature PL line shapes suggest that carriers are not thermalized, as a result of localization by band-gap fluctuations. We deduce a localization energy of ~7 meV as compared with an activation energy of ~63 meV from thermal quenching of the PL intensity. We thus conclude that this activation energy and the band-gap fluctuation most likely have different origins.
Original Publication Citation
An analysis of temperature dependent photoluminescence lineshapes in InGaN, K.L. Teo, J.S. Colton, P.Y. Yu, E.R. Weber, M.F. Li, W. Liu, K. Uchida, H.Tokunaga, N. Akutsu and K. Matsumoto, Appl. Phys. Lett.73, 1697 (1998). The original version may be found at: http://apl.aip.org/resource/1/applab/v73/i12/p1697_s1
BYU ScholarsArchive Citation
Colton, John S.; Teo, K. L.; Yu, P. Y.; Weber, E. R.; Li, M. F.; Lui, W.; Uchida, K.; Tokunaga, H.; Akutsu, N.; and Matsumoto, K., "An analysis of temperature dependent photoluminescence line shapes in InGaN" (1998). Faculty Publications. 642.
American Institute of Physics
Physical and Mathematical Sciences
Physics and Astronomy
© 1998 American Institute of Physics
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