Keywords
electrowetting, floating electrode, silicon dioxide, droplet charging, electrowetting grounding, memory droplet
Abstract
Floating electrode electrowetting is caused by dc voltage applied to a liquid droplet on the Cytop surface, without electrical connection to the substrate. The effect is caused by the charge separation in the floating electrode. A highly-resistive thermally-grown SiO2 layer underneath the Cytop enables the droplet to hold charges without leakage, which is the key contribution. Electrowetting with an SiO2 layer shows a memory effect, where the wetting angle stays the same after the auxiliary electrode is removed from the droplet in both conventional and floating electrode electrowetting. Floating electrode electrowetting provides an alternative configuration for developing advanced electrowetting-based devices.
Original Publication Citation
M. Khodayari, B. Hahne, N. B. Crane, A. A. Volinsky (5/15/13). Floating electrode electrowetting on hydrophobic dielectric with an SiO2 layer. Applied Physics Letters, Vol 102 (May 13 2013), n 19 p 192907:1-3, DOI 10.1063/1.4807018.
BYU ScholarsArchive Citation
Khodayari, Mehdi; Hahne, Benjamin; Crane, Nathan B.; and Volinsky, Alex A., "Floating Electrode Electrowetting on Hydrophobic Dielectric with an SiO2 Layer" (2013). Faculty Publications. 5365.
https://scholarsarchive.byu.edu/facpub/5365
Document Type
Peer-Reviewed Article
Publication Date
2013-05-13
Permanent URL
http://hdl.lib.byu.edu/1877/8099
Publisher
Applied Physics Letters
Language
English
College
Ira A. Fulton College of Engineering and Technology
Department
Mechanical Engineering
Copyright Use Information
http://lib.byu.edu/about/copyright/