electron spin resonance, n-GaAs, doped, polarized
Spin resonance of localized electrons bound to donors in a specially designed n-GaAs layer has been performed at 236 MHz and 41 mT, using circular polarized light to polarize the electrons and photoluminescence to detect the electronic polarization. The polarization was diminished under the resonance condition. The electronic g factor obtained by this measurement is - 0.41 ± 0.01. The resonance linewidth of 2 mT corresponds to a spin lifetime of 28 ns. In order to observe the electronic spin resonance, nuclear effects were eliminated by application of rf fields to simultaneously resonate the nuclear spins.
Original Publication Citation
Optically oriented and detected electron spin resonance in a lightly doped n-GaAs layer, J.S. Colton, T.A. Kennedy, A.S. Bracker, D. Gammon, and J.B. Miller, Phys. Rev. B 67, 165315 (23). The original version may be found at: http://prb.aps.org/abstract/PRB/v67/i16/e165315
BYU ScholarsArchive Citation
Colton, John S.; Kennedy, T. A.; Bracker, A. S.; Gammon, D.; and Miller, J. B., "Optically oriented and detected electron spin resonance in a lightly doped n-GaAs layer" (2003). Faculty Publications. 503.
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