electron spin-echo, phase-memory times, center spins, chemical vapor deposition
Electron-spin-echo experiments reveal phase-memory times as long as 58 μs at 300 K for nitrogen-vacancy centers in chemical vapor deposition (CVD) single crystals. The spins were optically polarized and optically detected. Two high-quality CVD samples were studied. From the current results, it is not clear whether these phase-memory times represent a fundamental limit or are limited by an external source of decoherence.
Original Publication Citation
Long Coherence Times at 3K for Nitrogen-Vacancy Center Spins in Diamond Grown by Chemical Vapor Deposition, T.A. Kennedy, J.S. Colton, J.E. Butler, R.C. Linares, and P.J. Doering, Appl. Phys. Lett. 83, 419 (23). The original version may be found at: http://apl.aip.org/resource/1/applab/v83/i2/p419_s1
BYU ScholarsArchive Citation
Colton, John S.; Kennedy, T. A.; Butler, J. E.; Linares, R. C.; and Doering, P.J., "Long coherence times at 300 K for nitrogen-vacancy center spins in diamond grown by chemical vapor deposition" (2003). Faculty Publications. 469.
American Institute of Physics
Physical and Mathematical Sciences
Physics and Astronomy
© 2003 American Institute of Physics
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