impact ionization, microelectronic, amplifier
The operation principle, fabrication, and measurement results for a stand-alone amplifier based on impact ionization are reported. The device was built in silicon using standard microelectronic processes. Testing was performed by connecting the device to both silicon and indium-gallium-arsenide photodiodes to demonstrate its compatibility with arbitrary current sources. Preamplified leakage currents of less than 1 nA were measured along with current gains greater than 100.
Original Publication Citation
Lee, Hong W. and Aaron R. Hawkins. "Solid-state current amplifier based on impact ionization." Applied Physics Letters 87 (25)
BYU ScholarsArchive Citation
Hawkins, Aaron R. and Lee, Hong-Wei, "Solid-state current amplifier based on impact ionization" (2005). All Faculty Publications. 353.
Ira A. Fulton College of Engineering and Technology
Electrical and Computer Engineering
© 2005 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at http://link.aip.org/link/?APPLAB/87/073511/1
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