Large grain polycrystalline and single crystals of ZnxCd1-xTe grown by a modified Bridgman method were studied using the photoluminescence and photoconductivity techniques. The temperature dependence of the band gap, as determined by photoluminescence, follows the Varshni equation for measuring temperature in the range of 15-290 K. One of the fitted parameters, the Debye temperature, monotonically decreases with the increase of the atomic zinc concentration. A close correlation between the photoluminescence and photoconductivity measurements is also found. Samples in which the photoluminescence spectra exhibit emission bands associated to cadmium vacancies and other structural defects, show a photoresponse curve which includes, in addition to the intrinsic band, another broad band at lower energies. Using the ionization energies of the defect related bands in the photoluminescence spectra we have identified the second band in the photoresponse curve due to the photoexcitation of trapped carriers at levels related with the structural defects.
Original Publication Citation
The following article appeared in Elías López-Cruz, J. González-Hernández, D.D. Allred and W.P. Allred, "Photoconductivity Characterization of ZnxCd1-xTe (≤x≤.25) Single Crystal Alloys," Journal of Vacuum Science Technology A, 8, 1934 38 (199). and can be found at [http://avspublications.org/jvsta/resource/1/jvtad6/v8/i3/p1934_s1][http://dx.doi.org/1.1116/1.576785].
BYU ScholarsArchive Citation
Allred, David D.; López-Cruz, Elías; González-Hernández, Jesus; and Allred, Worth P., "Photoconductive Characterization of ZnxCd1-xTe (0≤x≤0.25) Single Crystal Alloys" (1990). All Faculty Publications. 1195.
American Vacuum Society
Physical and Mathematical Sciences
Physics and Astronomy
© 1990 American Vacuum Society. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Vacuum Society.
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