Keywords

zinc selenide, atomic layer epitaxy, deposition, film

Abstract

Thin film deposition techniques currently being used to produce multilayer x-ray optics (MXOs) have difficulty producing smooth, uniform multilayers with d-spacings less than about twelve angstroms. We are investigating atomic layer epitaxy (ALE) as an alternative to these techniques. ALE is a chemical vapor deposition technique which deposits an atomic layer of material during each cycle of the deposition process. The thickness of a film deposited by ALE depends only on the number of cycles. Multilayers deposited by ALE should be smooth and uniform with precise d-spacings which makes ALE an excellent technique for producing multilayer x-ray optics. We have designed and built an ALE system and we have used this system to deposit ZnSe using diethyl zinc and hydrogen selenide.

Original Publication Citation

J.K. Shurtleff, D.D. Allred, R.T. Perkins, and J.M. Thorne, "Deposition of Zinc Selenide by Atomic Layer Epitaxy for Multilayer X-Ray Optics," in Properties of II VI Semiconductors: Bulk Crystals, Epitaxial Films, Quantum Well Structures, and Dilute Magnetic Systems, Materials Research Society Symposium Proceedings Series 161, 19 114 (199). [http://journals.cambridge.org/action/displayAbstract?fromPage=online&aid=8111174&fulltextType=RA&fileId=S194642743622][http://dx.doi.org/1.1557/PROC-161-19].