silicon field emitters, semiconductor lithography, electron current, energy distribution
We have fabricated arrays of silicon field emitters using semiconductor lithography techniques. The density of the tips was 10^5/cm^2. The maximum current that can be extracted from each emitter is limited by resistive heating. We have investigated how the electron current emitted changes under constant applied voltage. We found that the current is very sensitive to the vacuum conditions. We attribute this to sputtering of the emitters due to ionized residual gas molecules. The poorer the vacuum, the higher the instability in the current. We studied this phenomenon at 10^6 and 10-x Torr. The model of two concentric spherical shells is used to obtain the ion energy distribution. This is then used to calculate the rate of ion bombardment and the rate of atoms sputtered. A lifetime of the tip can be deduced from these calculations.
Original Publication Citation
The following article appeared in W.I. Karain, L. V. Knight, D. D. Allred and A. Reyes-Mena, "Emitted current instability from silicon field emission emitters due to sputtering by residual gas ions," Journal of Vacuum Science Technology A 12(4), 2581 85 (1994). and can be found at [http://avspublications.org/jvsta/resource/1/jvtad6/v12/i4/p2581_s1][http://dx.doi.org/1.1116/1.57961].
BYU ScholarsArchive Citation
Karain, W.I.; Knight, Larry V.; Allred, David D.; and Reyes-Mena, A., "Emitted Current Instability from Silicon Field Emission Emitters Due to Sputtering by Residual Gas Ions" (1994). Faculty Publications. 1169.
American Vacuum Society
Physical and Mathematical Sciences
Physics and Astronomy
© 1994 American Vacuum Society. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Vacuum Society.
Copyright Use Information