InGaAs quantum dot chains were grown with a low-temperature variation of the Stranski-Krastanov method, the conventional epitaxial method. This new method seeks to reduce indium segregation and intermixing in addition to giving greater control in the growth process. We used photoluminescence spectroscopy techniques to characterize the quality and electronic structure of these samples. We have recently used a transmission electron microscope to show how the quantum dots vary with annealing temperature. Some questions relating to the morphology of the samples cannot be answered by photoluminescence spectroscopy alone. Using transmission electron microscopy, we verified flattening of the quantum dots with annealing temperature and resolved the chemical composition with cross-section cuts and plan view cuts.
College and Department
Physical and Mathematical Sciences; Physics and Astronomy
BYU ScholarsArchive Citation
Park, Tyler Drue, "Characterization of InGaAs Quantum Dot Chains" (2013). All Theses and Dissertations. 3718.
quantum dots, quantum dot chains, InGaAs, transmission electron microscopy