RESONANT TUNNELING OF GAUSSIAN BEAMS

Authors

Travis Elgin Oliphant, Brigham Young University

Keywords

Gaussian beam, electromagnetic phenomena, resonant tunneling

College

Ira A. Fulton College of Engineering and Technology

Department

Electrical and Computer Engineering

Abstract

The Interaction of Gaussian beams with multi-layer dielectric structures has been the subject of numerous studies since Goos and Hiinchen first reported their findings [1]. In addition, resonant tunneling has been a source of considerable investigation both as It applies to quantum electronics and with regard to electromagnetic phenomena. Transistor [2] and a waveguide polarizer [3] have been suggested to take advantage of the resonant tunneling effects of a plane-wave impinging on a multilayer dielectric. The purpose of this study is to further examine the possibility of such applications of resonant tunneling phenomena by extending the analysis to finite width beams. Specifically, this research focuses on the behavior of two-dimensional Gaussian beams at five-layer dielectric structures used in resonant-tunneling applications. This report provides a brief synopsis of some of the results contained in an Honors thesis submitted to Brigham Young University in July, 1995[4].

Recommended Citation

Oliphant, Travis Elgin (2014) "RESONANT TUNNELING OF GAUSSIAN BEAMS," Journal of Undergraduate Research: Vol. 2014: Iss. 1, Article 91.
Available at: https://scholarsarchive.byu.edu/jur/vol2014/iss1/91