Physical Vapor Deposition of Silicon Dioxide from a Silicon Tetraacetate Precursor for Anchoring Nanotubes to Atomic Force Microscopy Probe Tips

Authors

Jed Whittaker, Brigham Young University
Dr. Robert Davis, Brigham Young University

Keywords

physical vapor deposition, silicone dioxide, silicon tetraacetate precursor, anchoring nanotubes

College

Physical and Mathematical Sciences

Department

Physics and Astronomy

Abstract

It has been previously shown¹ that silicon tetraacetate vapor thermally decomposes to a silicon dioxide thin film and gas phase acid anhydride at 160-170°C. Here a method is developed to anchor carbon nanotubes to atomic force microscope (AFM) tips with such a silicon dioxide thin film. Anchoring nanotubes to probe tips allows their high-resolution properties to be exploited in fluids for imaging biological samples. No tips were used as substrates in this experiment however, only silicon wafer pieces about 1 cm square. The silicon tetraacetate vapor was produced by heating it to 100-110°C, just below the melting point. This prevented it from evaporating too fast and recrystallizing on the silicon wafer surface before decomposing to silicon dioxide. The wafer surface was heated to 160-170°C so that the decomposition and silicon dioxide deposition could occur.

Recommended Citation

Whittaker, Jed and Davis, Dr. Robert (2014) "Physical Vapor Deposition of Silicon Dioxide from a Silicon Tetraacetate Precursor for Anchoring Nanotubes to Atomic Force Microscopy Probe Tips," Journal of Undergraduate Research: Vol. 2014: Iss. 1, Article 1259.
Available at: https://scholarsarchive.byu.edu/jur/vol2014/iss1/1259