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Journal of Undergraduate Research

Keywords

titanium dioxide, transmission electron microscope, GaN, Gallium Nitride

College

Physical and Mathematical Sciences

Department

Physics and Astronomy

Abstract

The original title submitted for my research was “Stacking Faults in GaN”. This study was aimed at employing the use of the Transmission Electron Microscope (TEM) to understand and image defects in the crystal lattice of Gallium Nitride (GaN) that lead to stacking faults. Because of difficulties in the preparation of the material we decided to use the resources and time granted us to work on a project in conjunction with some individuals in the chemistry department. This new project is consistent with the prior investigation, in that the same procedures would be followed, with the same equipment, but with different materials. Also in the old project our study was designed to characterize specific properties of GaN, and with the data collected in this assignment we would also be able to do that with Titanium Dioxide (TiO2) as well as label areas of interest for our collaborative group.

Included in

Physics Commons

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