We report the observation of narrower structures in the yellow luminescence of bulk and thin-film n-type GaN, using the technique of selective excitation. These fine structures exhibit thermal quenching associated with an activated behavior. We attribute these fine structures to phonons and electronic excitations of a shallow donor-deep acceptor complex, and determine its activation energy for delocalization. Our results suggest that in addition to distant donor-acceptor pairs, the yellow luminescence can also involve emission complexes of shallow donors and deep acceptors.
Original Publication Citation
Selective excitation and thermal quenching of the yellow luminescence of GaN, J.S. Colton, K.L. Teo, P.Y. Yu, P. Perlin, E.R. Weber, I. Grzegory and K. Uchida, Appl. Phys. Lett. 75, 3273 (1999). The original version may be found at: http://apl.aip.org/resource/1/applab/v75/i21/p3273_s1
BYU ScholarsArchive Citation
Colton, John S.; Yu, P. Y.; Teo, K. L.; Weber, E. R.; Perlin, P.; Grzegory, I.; and Uchida, K., "Selective excitation and thermal quenching of the yellow luminescence of GaN" (1999). All Faculty Publications. 609.
American Institute of Physics
Physical and Mathematical Sciences
Physics and Astronomy
© 1999 American Institute of Physics
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