thermal resistance, thin film, atomic force microscopy, heat transfer
Thermal diffusion measurements on polymethylmethacrylate-coated Si substrates using heated atomic force microscopy tips were performed to determine the contact resistance between an organic thin film and Si. The measurement methodology presented demonstrates how the thermal contrast signal obtained during a force-displacement ramp is used to quantify the resistance to heat transfer through an internal interface. The results also delineate the interrogation thickness beyond which thermal diffusion in the organic thin film is not affected appreciably by the underlying substrate.
Original Publication Citation
Iverson, B. D., Blendell, J. E., and Garimella, S. V., 2010, "Note: Thermal analog to atomic force microscopy force-displacement measurements for nanoscale interfacial contact resistance," Review of Scientific Instruments, Vol. 81. DOI: 10.1063/1.3361157
BYU ScholarsArchive Citation
Iverson, Brian D.; Blendell, John E.; and Garimella, Suresh V., "Note: Thermal Analog to Atomic Force Microscopy Force-Displacement Measurements for Nanoscale Interfacial Contact Resistance" (2010). All Faculty Publications. 2972.
Ira A. Fulton College of Engineering and Technology
© 2010 American Institute of Physics. This article is the Version of Record published by AIP publishing in Review of Scientific Instruments in 2010, available online at https://aip.scitation.org/doi/10.1063/1.3361157
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