aluminum, energy, Grain boundary properties, mobility, polycrystals, triple junctions
This work was supported primarily by the MRSEC program of the National Science Foundation under Award Number DMR-0079996. Microstructure controls the properties of most useful materials. Thus an ability to control microstructure through the processing of materials is a key to optimization of materials performance. Most materials are polycrystalline and their grain structure is a very important aspect of their microstructure. Thanks to their complexity there is a great variety of grain boundary types even in relatively isotropic materials such as the cubic metals. Simply describing the crystallography requires five (macroscopic) parameters (e.g. disorientation and inclination). Evidently, acquiring a knowledge of the variation of properties such as energy and mobility as a function of grain boundary type would be of great value in predicting properties and optimizing processing. This paper outlines the methods being employed to extract such properties from the geometry and crystallography of triple junctions between grain boundaries.
Original Publication Citation
Brent L. Adams. "Grain Boundary Property Determination through Measurement of Triple Junction Geometry and Crystallography".
BYU ScholarsArchive Citation
Adams, Brent L.; Casasent, D.; Demirel, M.; El-Dasher, Bassem S.; Kinderlehrer, D.; Liu, C.; Livshits, I.; Manolache, F.; Mason, D.; Morawiec, A.; Mullins, W. W.; Ozdemir, S.; Rohrer, Gregory S.; Rollett, Anthony D.; Saylor, David M.; Ta'asan, Shlomo; Talukder, A.; Wu, Chialin T.; Yang, C. C.; and Yang, W., "Grain Boundary Property Determination through Measurement of Triple Junction Geometry and Crystallography" (2006). Faculty Publications. 1214.
Ira A. Fulton College of Engineering and Technology
© 2006 Brent L. Adams, D. Casasent, M. Demirel, Bassem S. El-Dasher, D. Kinderlehrer, C. Liu, I. Livshits, F. Manolache, D. Mason, A. Morawiec, W.W. Mullins, S. Ozdemir, Gregory S. Rohrer, Anthony D. Rollett David M. Saylor, Shlomo Ta'asan, A. Talukder, Chialin T. Wu, C.C. Yang, and W. Yang
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