We have prepared, heat treated and characterized various amorphous semiconductor periodic multilayers and ultrathin films. These were prepared by several vapor deposition techniques at substrate temperatures ranging from 25°C to 300°C and possessed periodicities from 22 to 400Å. Films were subjected to isochronal thermal treatments at progressively higher temperatures. Two effects were observed: enhanced diffusion and retarded crystallization. Interdiffusion, at rates which are many orders of magnitude higher than those anticipated from crystalline data, was observed in a-Si/a-Ge multilayers. Crystallization of germanium, the more readily crystallized member of the couple, is retarded; the extent depends on the thickness of the layer. The thinner the layer, the greater the retardation. Where intermixing is thermodynamically unfavorable as in a-Si/a-SiNx or a-Ge/a-SiNx multilayers, and ultrathin germanium layers on SiO2, interdiffusion does not occur, however, crystallization of silicon or germanium is again substantially retarded.
Original Publication Citation
J. González-Hernández, David D. Allred, and O.V. Nguyen, "Anneal Induced Changes in Amorphous Semiconductor Multilayers," Interfaces, Superlattices and Thin Films, Materials Research Society Symposium Proceedings, 77, 665-67, (1987). [http://journals.cambridge.org/action/displayAbstract?fromPage=online&aid=8168785&fulltextType=RA&fileId=S19464274513682][http://dx.doi.org/1.1557/PROC-77-569].
BYU ScholarsArchive Citation
Allred, David D.; González-Hernández, Jesus; and Nguyen, O. V., "Anneal Induced Changes in Amorphous Semiconductor Multilayers" (1987). Faculty Publications. 1202.
Cambridge University Press (CPU); Materials Research Society (MRS)
Physical and Mathematical Sciences
Physics and Astronomy
© 1987 Cambridge University Press for Materials Research Society. All rights reserved.
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