Zinc cadmium telluride (ZnxCd1-xTe) solid solution films with 0≤x≤0.12 were deposited by the close spaced vapor transport method and characterized using photoluminescence, x-ray diffraction, and scanning electron microscopy. The two former techniques indicate that films with high crystalline quality can be prepared with moderate substrate temperatures and low argon pressures. Under these conditions deposition rates of up to 1000 Å/s are achieved and Zn concentration in the film is the same as that of the source. The electron micrographs show grain sizes comparable to the film thickness.
Original Publication Citation
The following article appeared in J. González-Hernández, O. Zelaya, J.G. Mendoza-Alverez, Elías López-Cruz, and D.D. Allred, "Structure and optical characterization of ZnxCd1-xTe thin films prepared by the close spaced vapor transport method," Journal of Vacuum Science Technology 9, 55 4 (1991). and can be found at [http://avspublications.org/jvsta/resource/1/jvtad6/v9/i3/p55_s1][http://dx.doi.org/1.1116/1.57747].
BYU ScholarsArchive Citation
Allred, David D.; González-Hernández, Jesus; Zelaya, O.; Mendoza-Alverez, J. G.; López-Cruz, E.; and Pawlik, D. A., "Structure and Optical Characterization of ZnxCd1-xTe Thin Films Prepared by the Close Spaced Vapor Transport Method" (1991). Faculty Publications. 1186.
American Vacuum Society
Physical and Mathematical Sciences
Physics and Astronomy
© 1991 American Vacuum Society. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Vacuum Society.
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