Scanning electron microscopy, atomic force microscopy, and Raman spectroscopy were used to characterize the microstructure of photoluminescent porous silicon (PS) layers formed by the anodic etching (HF:H2O:ethanol), at various current densities, of p-type (100) silicon wafers possessing resitivity in the range 1-2 Ω cm. Existing models for the origin of luminescence in PS are not supported by our observations. Cross-sectional as well as surface atomic force micrographs show the material to be clumpy rather than columnar; rodlike structures are not observed down to a scale of 40 nm. A three-dimensional model of the mesostructure of porous silicon is discussed. Room-temperature Raman scattering measurements show no evidence for a-Si:H or polysilanes and the material reported here is composed of 10 nm roughly spherical Si nanocrytallites rather than 3 nm wires postulated in standard quantum confinement models.
Original Publication Citation
The following article appeared in F. Ruiz, C. Vázquez-López, Jesus González-Hernández, and David D. Allred, G. Romero Paredes and R. Peña-Sierra and G. Torres Delgado, "Mesostructure of photoluminescent porous silicon," Journal of Vacuum Science Technology A 12(4), 2565 71 (1994). and may be found at [http://avspublications.org/jvsta/resource/1/jvtad6/v12/i4/p2565_s1][http://dx.doi.org/1.1116/1.57958].
BYU ScholarsArchive Citation
Allred, David D.; Ruiz, F.; Vázquez-López, C.; González-Hernández, Jesus; Romero-Paredes, G.; Peña-Sierra, R.; and Torres-Delgado, G., "Mesostructure of Photoluminescent Porous Silicon" (1994). Faculty Publications. 1170.
American Vacuum Society
Physical and Mathematical Sciences
Physics and Astronomy
© 1994 American Vacuum Society. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Vacuum Society.
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