Abstract

Photoluminescence (PL) line shapes in InGaN multiple quantum well structures have been studied experimentally and theoretically between 10 and 300 K. The higher temperature PL spectra can be fitted qualitatively with a thermalized carrier distribution and a broadened joint-density-of-states. The low temperature PL line shapes suggest that carriers are not thermalized, as a result of localization by band-gap fluctuations. We deduce a localization energy of ~7 meV as compared with an activation energy of ~63 meV from thermal quenching of the PL intensity. We thus conclude that this activation energy and the band-gap fluctuation most likely have different origins.

Original Publication Citation

An analysis of temperature dependent photoluminescence lineshapes in InGaN, K.L. Teo, J.S. Colton, P.Y. Yu, E.R. Weber, M.F. Li, W. Liu, K. Uchida, H.Tokunaga, N. Akutsu and K. Matsumoto, Appl. Phys. Lett.73, 1697 (1998). The original version may be found at: http://apl.aip.org/resource/1/applab/v73/i12/p1697_s1

Document Type

Peer-Reviewed Article

Publication Date

1998-09-21

Permanent URL

http://hdl.lib.byu.edu/1877/2986

Publisher

American Institute of Physics

Language

English

College

Physical and Mathematical Sciences

Department

Physics and Astronomy

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