Abstract

We report the observation of narrower structures in the yellow luminescence of bulk and thin-film n-type GaN, using the technique of selective excitation. These fine structures exhibit thermal quenching associated with an activated behavior. We attribute these fine structures to phonons and electronic excitations of a shallow donor-deep acceptor complex, and determine its activation energy for delocalization. Our results suggest that in addition to distant donor-acceptor pairs, the yellow luminescence can also involve emission complexes of shallow donors and deep acceptors.

Original Publication Citation

Selective excitation and thermal quenching of the yellow luminescence of GaN, J.S. Colton, K.L. Teo, P.Y. Yu, P. Perlin, E.R. Weber, I. Grzegory and K. Uchida, Appl. Phys. Lett. 75, 3273 (1999). The original version may be found at: http://apl.aip.org/resource/1/applab/v75/i21/p3273_s1

Document Type

Peer-Reviewed Article

Publication Date

1999-11-22

Permanent URL

http://hdl.lib.byu.edu/1877/2993

Publisher

American Institute of Physics

Language

English

College

Physical and Mathematical Sciences

Department

Physics and Astronomy

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