Keywords

selective excitation, thermal quenching, yellow luminescence, GaN, structures

Abstract

We report the observation of narrower structures in the yellow luminescence of bulk and thin-film n-type GaN, using the technique of selective excitation. These fine structures exhibit thermal quenching associated with an activated behavior. We attribute these fine structures to phonons and electronic excitations of a shallow donor-deep acceptor complex, and determine its activation energy for delocalization. Our results suggest that in addition to distant donor-acceptor pairs, the yellow luminescence can also involve emission complexes of shallow donors and deep acceptors.

Original Publication Citation

Selective excitation and thermal quenching of the yellow luminescence of GaN, J.S. Colton, K.L. Teo, P.Y. Yu, P. Perlin, E.R. Weber, I. Grzegory and K. Uchida, Appl. Phys. Lett. 75, 3273 (1999). The original version may be found at: http://apl.aip.org/resource/1/applab/v75/i21/p3273_s1