Abstract

We use pseudopotential theory to provide (1) the band offsets of strained GaAs and InAs on various substrates and (2) the energies Ev(x) of the valence and conduction bands of InxGa1-xAs alloy, as a function of composition. Results are presented for both the bulk alloy and for the alloy strained on InP or GaAs. We predict that while Ex(x) bows downward for relaxed bulk alloys, it bows upward for strained epitaxial alloys. The calculated alloy offsets are used to discuss electron and hole localization in this system.

Original Publication Citation

K. Kim, G. L. W. Hart, and A. Zunger, "Negative Band Gap Bowing in Epitaxial InAs/GaAs Alloys and Predicted Band Offsets of the Strained Binaries and Alloys on Various Substrates," Appl. Phys. Lett. 8 315 (29 April 22). The original article may be found here: http://apl.aip.org/resource/1/applab/v8/i17/p315_s1

Document Type

Peer-Reviewed Article

Publication Date

2002-02-26

Permanent URL

http://hdl.lib.byu.edu/1877/2962

Publisher

American Institute of Physics

Language

English

College

Physical and Mathematical Sciences

Department

Physics and Astronomy

Share

COinS