Abstract

Electron-spin-echo experiments reveal phase-memory times as long as 58 μs at 300 K for nitrogen-vacancy centers in chemical vapor deposition (CVD) single crystals. The spins were optically polarized and optically detected. Two high-quality CVD samples were studied. From the current results, it is not clear whether these phase-memory times represent a fundamental limit or are limited by an external source of decoherence.

Original Publication Citation

Long Coherence Times at 3K for Nitrogen-Vacancy Center Spins in Diamond Grown by Chemical Vapor Deposition, T.A. Kennedy, J.S. Colton, J.E. Butler, R.C. Linares, and P.J. Doering, Appl. Phys. Lett. 83, 419 (23). The original version may be found at: http://apl.aip.org/resource/1/applab/v83/i2/p419_s1

Document Type

Peer-Reviewed Article

Publication Date

2003-11-17

Permanent URL

http://hdl.lib.byu.edu/1877/2988

Publisher

American Institute of Physics

Language

English

College

Physical and Mathematical Sciences

Department

Physics and Astronomy

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