band discontinuity, heterojunction, heterointerface, InGaAs/Si
p-type InGaAs/Si heterojunctions were fabricated through a wafer fusion bonding process. The relative band alignment between the two materials at the heterointerface was determined using current-voltage (I-V) measurements and applying thermionic emission-diffusion theory. The valence and conduction band discontinuities for the InGaAs/Si interface were determined to be 0.48 and 0.1 eV, respectively, indicating a type-II band alignment.
Original Publication Citation
Mckay, Kyle S., Felix P. Lu, Jungsang Kim, Changhyun Yi, April S. Brown, and Aaron R. Hawkins. "Band discontinuity measurements of the wafer bonded InGaAs/Si heterojunction." Applied Physics Letters 9 (27)
BYU ScholarsArchive Citation
Hawkins, Aaron R.; McKay, Kyle S.; Lu, Felix P.; Kim, Jungsang; Yi, Changhyun; and Brown, April S., "Band discontinuity measurements of the wafer bonded InGaAs/Si heterojunction" (2007). All Faculty Publications. 254.
Ira A. Fulton College of Engineering and Technology
Electrical and Computer Engineering
© 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at http://link.aip.org/link/?APPLAB/90/222111/1
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