Abstract

We have produced arrays of 10,000 sharp p-type silicon points using an etch plus oxidation method. The points were used as electron emitters. No high vacuum cesiation or high temperature cleaning was needed to observe the electron emission. These are seen to be photosensitive sources of electrons at 200 K and 300 K. They were also used to produce AlKα x-rays. This constitutes the first use of etched, point arrays for generating electrons for x-ray sources.

Original Publication Citation

W.I. Karain, Larry V. Knight, David D. Allred and A. Reyes-Mena, "X-ray diode using a silicon field emission photocathode," Soft X Ray Microscopy, Chris J. Jacobsen and James E. Trebes, Editors, Proceedings of SPIE 1741 (1992), 12-18. http://spiedigitallibrary.org/proceedings/resource/2/psisdg/1741/1/12_1?isAuthorized=no http://dx.doi.org/1.1117/12.138731

Document Type

Peer-Reviewed Article

Publication Date

1992

Permanent URL

http://hdl.lib.byu.edu/1877/2913

Publisher

Society of Photo Optical Instrumentation Engineers (SPIE)

Language

English

College

Physical and Mathematical Sciences

Department

Physics and Astronomy

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