Abstract

Depth profiles for hydrogen in amorphous silicon have been determined by the use of resonant nuclear reactions [1H(15N,αγ)12C and 1H(19F,αγ)16O] and by secondary ion mass spectroscopy (SIMS). Independent calibration procedures were used for the two techniques. Measurements were made on the same amorphous silicon film to provide a direct comparison of the two hydrogen analysis techniques. The hydrogen concentration in the bulk of the film was determined to be about 9 at % H. The SIMS results agree with the resonant nuclear reaction results to within 10%, which demonstrates that quantitative hydrogen depth profiles can be obtained by SIMS analysis for materials such as amorphous silicon.

Original Publication Citation

G.J. Clark, C.W. White, David D. Allred, B.R. Appleton, C.W. Magee, and D.E. Carlson, "The use of nuclear reactions and SIMS for quantitative depth profiling of hydrogen in amorphous silicon," Applied Physics Letters 31, 582 585 (1977).

Document Type

Peer-Reviewed Article

Publication Date

1977-08-16

Permanent URL

http://hdl.lib.byu.edu/1877/2909

Publisher

American Institute of Physics (AIP)

Language

English

College

Physical and Mathematical Sciences

Department

Physics and Astronomy

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